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| v01.0604 MICROWAVE CORPORATION HMC441LP3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Features Gain: 14 dB Saturated Power: +20 dBm @ 20% PAE Single Supply Voltage: +5.0 V w/ Optional Gate Bias 50 Ohm Matched Input/Output 3 x 3 x 1 mm QFN SMT Package 8 AMPLIFIERS - SMT Typical Applications The HMC441LP3 is a medium PA for: * Point-to-Point Radios * Point-to-Multi-Point Radios * VSAT * LO Driver for HMC Mixers * Military EW & ECM Functional Diagram General Description The HMC441LP3 is a broadband GaAs PHEMT MMIC Medium Power Amplifier which operates between 6.5 and 13.5 GHz. The leadless plastic QFN surface mount packaged amplifier provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5.0 V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers. Vgg1, Vgg2: Optional Gate Bias Electrical Specifications, TA = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 23 13 10 Min. Typ. 6.5 - 8.0 13 0.02 12 12 16 18.5 26 5.0 80 26 15 0.025 12 Max. Min. Typ. 8.0 - 11.0 14 0.02 15 15 18 20 29 4.5 80 26 14 0.025 10 Max. Min. Typ. 11.0 - 13.5 13 0.02 14 13 17 19.5 29 4.75 80 0.025 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA 8 - 204 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v01.0604 MICROWAVE CORPORATION HMC441LP3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Broadband Gain & Return Loss 20 15 10 Gain vs. Temperature 20 18 16 8 AMPLIFIERS - SMT 8 - 205 RESPONSE (dB) 5 14 GAIN (dB) 0 -5 -10 -15 -20 -25 4 5 6 7 8 9 10 S21 S11 S22 12 10 8 6 4 2 0 +25 C +85 C -40 C 11 12 13 14 15 16 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25 C Output Return Loss vs. Temperature 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) +85 C -40 C -5 +25 C +85 C -40 C -10 -10 -15 -15 -20 -20 -25 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) -25 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) P1dB vs. Temperature 24 22 20 18 Psat vs. Temperature 24 22 20 18 P1dB (dB) 14 12 10 8 6 4 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) +25 C +85 C -40 C Psat (dB) 16 16 14 12 10 +25 C 8 6 4 6 7 8 9 10 11 12 +85 C -40 C 13 14 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0604 HMC441LP3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz 8 AMPLIFIERS - SMT Power Compression @ 10 GHz 22 Output IP3 vs. Temperature 36 34 32 30 Pout (dBm), GAIN (dB), PAE (%) 20 18 16 OIP3 (dBm) 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 2 4 6 Pout Gain PAE 28 26 24 22 +25 C 20 18 16 10 6 7 8 9 10 11 12 +85 C -40 C 8 13 14 INPUT POWER (dBm) FREQUENCY (GHz) Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 32 30 28 26 24 22 20 18 16 14 12 10 3 3.5 4 4.5 5 5.5 Vdd Supply Voltage (Vdc) Gain P1dB Psat OIP3 Gain, Power & Idd vs. Gate Voltage @ 10 GHz 35 210 Gain P1dB Psat Idd GAIN (dB), P1dB (dBm), Psat (dBm) 30 25 20 15 10 5 0 -2 -1.8 -1.6 -1.4 180 150 120 90 60 30 0 Idd (mA) -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 Vgg1, Vgg2 Gate Volltage (Vdc) Noise Figure vs. Temperature 10 9 8 +25 C +85 C -40 C Reverse Isolation vs. Temperature 0 +25 C +85 C -40 C -10 NOISE FIGURE (dB) 6 5 4 3 2 1 0 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) ISOLATION (dB) 7 -20 -30 -40 -50 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) 8 - 206 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0604 HMC441LP3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1,Vgg2) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 10 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc -8.0 to 0 Vdc +20 dBm 150 C 0.65 W Typical Supply Current vs. Vdd Vdd (V) +5.5 +5.0 +4.5 +3.3 +3.0 Idd (mA) 81 80 79 72 71 8 AMPLIFIERS - SMT 8 - 207 100 C/W -65 to +150 C -40 to +85 C Note: Amplifier will operate over full voltage range shown above Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0604 HMC441LP3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 3-5, 8-10, 12-14, 16 Function N/C Description This pin may be connected to RF/DC ground. Interface Schematic 2 RF IN This pin is AC coupled and matched to 50 Ohms from 6.5 - 13.5 GHz. 6, 7 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. 11 RF OUT This pin is AC coupled and matched to 50 Ohms from 6.5 -13.5 GHz. 15 Vdd Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is required. GND Package bottom must be connected to RF/DC ground. 8 - 208 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0604 HMC441LP3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1 - J2 J3 - J7 C1 C2 - C4 U1 PCB* Description PC Mount SMA Connector DC Pin 4.7 F Capacitor, Tantalum 100 pF Capacitor, 0402 Pkg. HMC441LP3 Amplifier 106639 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 209 |
Price & Availability of HMC441LP3
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